
Described herein is a dynamic memory. An N channel type voltage clamp MOSFET is provided which has a drain supplied with a supply voltage supplied from an external terminal, a gate to which a boosted constant voltage is applied, and a source which outputs a constant voltage. The clamp voltage outputted from the source of the voltage clamp MOSFET is supplied to a common source line for each of P channel type amplification MOSFETs constituting a sense amplifier via a P channel type first power MOS...











