A spin valve type magnetoresistance effect film comprises a magnetic multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from a surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnet...

A copper alloy comprising 0.1-7.3% of titanium and optionally comprising one or more of zinc, silicon and silver in amounts of 0.001-10%, 0.001-3% and 0.001-1%, respectively, wherein its surface layer contains an oxide containing titanium. This copper alloy exhibits sterilizing effect based on copper and antibacterial effect based on optical catalyst function resulting from the oxide which contains titanium dispersed in the surface layer. The oxide containing titanium can be produced by heating ...

In a field effect transistor, an element isolation trench is formed around the element region on the major surface of a silicon substrate. A gate electrode is formed on the major surface in the element region via a gate insulating film. Source and drain regions are formed on the major surface of the element region to oppose via a channel region under the gate electrode. The channel region has a main portion having an upper surface at a level higher than the upper end portion of a trench side wal...

A magnetoresistive effect element having a lamination structure of a free magnetic layer, a non-magnetic layer in contact with the free magnetic layer, a pinned magnetic layer in contact with the non-magnetic layer, and an anti-ferromagnetic layer in contact with the pinned magnetic layer, wherein the product of a saturation magnetization of the pinned magnetic layer and a thickness of the pinned magnetic layer is not higher than 2.times.10.sup.-9 T.multidot.m. The pinned magnetic layer may incl...

In a spin valve type magnetoresistance effect film comprising a multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from the other surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromag...

In a spin valve type magnetoresistance effect film, an antiferromagnetic layer is made of M.sub.x Mn.sub.100-x wherein M represents at least one selected from Ru, Rh, Re, Pt, Pd, Au, Ag, Fe, Ni, Ir and Cr, and 15.ltoreq.x.ltoreq.58 (unit of x: atomic %), and a protective layer formed thereon is made of at least one selected from Rh, Ru, Zr and Ti. With this arrangement, a magnetoresistance effect film highly excellent in thermal stability and small in deterioration of the MR ratio, as well as a ...

A magnetoresistive effect element comprises a base layer, an antiferromagnetic layer extending over the base layer, a pinned magnetic layer extending over the antiferromagnetic layer, a first non-magnetic layer extending over the pinned magnetic layer, and a free magnetic layer extending over the first non-magnetic layer, wherein the pinned magnetic layer includes at least one selected from the group consisting of Co-based materials, Ni-based materials, Fe-based materials and alloys thereof, and...

A spin valve type magnetoresistance effect film comprises a multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from the other surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic la...

A soft magnetic layer constituting a spin valve type magnetoresistance effect film comprises a multilayered body having at least two layers and including a first soft magnetic layer substantially made of Co or CoFe, and a second soft magnetic layer substantially made of NiFeX (wherein X represents at least one selected from Ta and Nb) in the order named from the side of a non-magnetic metal layer. More preferably, the soft magnetic layer comprises a multilayered body having at least three layers...

In a field effect transistor, an element isolation trench is formed around the element region on the major surface of a silicon substrate. A gate electrode is formed on the major surface in the element region via a gate insulating film. Source and drain regions are formed on the major surface of the element region to oppose via a channel region under the gate electrode. The channel region has a main portion having an upper surface at a level higher than the upper end portion of a trench side wal...