A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer.

A marker lamp having a transparent cylindrical tube in which are mounted a plurality of incandescent filament-type bulbs spaced along the longitudinal axis of the tube. Either the outer or inner surface of the tube has straight striations or grooves extending longitudinally of the tube. When the bulbs are illuminated, there is formed in the tube a light halo centered on each bulb and lying in a plane perpendicular to the longitudinal axis of the tube.

A field effect transistor having a short channel length of 1 .mu.m or less is disclosed. The transistor includes a plurality of impurity regions provided in the channel region between the source and drain regions. The impurity region has the same conductivity type as the channel produced between the impurity regions and a higher impurity density than the carrier density of the channel so that the heat in the carriers is transferred laterally to the impurity regions.

A surface effect ship and a system of cushion pressurization by forcing into the cushion chamber a homogeneous mixture of air and gas. The surface effect ship is provided with a hull, having propulsion device, associated with rudders, and a skirt to confine the pressurized cushion chamber beneath the ship. In order to decrease the empty weight and thus to increase the performance of the surface effect ship, the traditional heavy and complicated mechanical lift system for cushion pressurization i...

A field effect transistor comprises a source electrode, a drain electrode, a channel layer between the source electrode and the drain electrode, a gate electrode for controlling electric current in the channel layer, and a superlattice layer interposed between the channel layer and the gate electrode, the superlattice layer having a plurality of constituent thin layers perpendicular to a direction of electric current in the channel layer.

A magnet holder has vertically disposed front and back walls and a horizontal wall connecting the front and back walls, with complementary visual images on the front surfaces of the front and back walls, and magnets are mounted to the back of the front wall and to the bottom of the connecting wall, so that the holder is mounted on the top front edge of a refrigerator door, and when so mounted, the visual images provide a three-dimensional effect when viewed from the front.

A Hall-effect control apparatus incorporating an actuator member having a magnetic core, and which is pivotally mounted on a base for movement in X-axis and Y-axis directions. An electrically energized coil excited with a. c. voltage produces a fluctuating magnetic field in the vicinity of the core. Four Hall-effect sensors are mounted on the base, and are arranged to sense changes in the a. c. field as the core member moves. The output of the Hall-effect sensors is both d. c. and a. c.; an elec...

A junction field effect semiconductor device is provided with p-type source and drain semiconductor regions separately formed in an n-type expitaxial layer grown on a substrate, a p-type channel layer, a highly doped n.sup.+ -type gate region surrounding the source and drain regions and the channel layer, and a highly doped n.sup.+ -type top gate layer formed on the channel layer. The channel layer is formed only in an area bounded between the source and drain regions, so that it is possible to ...

A seven-effect absorption refrigeration cycle is disclosed utilizing three absorption circuits. In addition, a heat exchanger is used for heating the generator of the low absorption circuit with heat rejected from the condenser and absorber of the medium absorption circuit. A heat exchanger is also provided for heating the generator of the medium absorption circuit with heat rejected from the condenser and absorber of the high absorption circuit. If desired, another heat exchanger can also be pr...

Junction field effect transistor, specifically a static induction transistor, and method of fabricating. A low resistivity N-type surface layer is formed at the surface of a high resistivity N-type epitaxial layer which has been grown on a low resistivity N-type substrate of silicon. The surface of the surface layer is coated with silicon dioxide and portions of the silicon dioxide layer are removed to expose alternating gate surface areas and source surface areas. P-type conductivity material i...