This disclosure depicts a novel semiconductor device and the method of making it. A novel field effect transistor (FET) has a channel region which is heavily doped under the gate and between the gate and the source of the FET. The channel region between the gate and the drain is lightly doped. The FET is formed on a heavily doped semiconductor substrate. The method of making the novel FET comprises providing a mask layer over a lightly doped channel region and forming openings in the mask layer ...

The invention relates to a field-effect transistor having a drain region, a source region and a gate electrode for influencing a channel area. The invention consists of arranging the source region and the gate electrode one above the other in a projection onto the channel plane such that the effective length is so small that an increase of the electron velocity in the channel is achieved.

A Hall-effect magnetic sensor arrangement comprises a sensor element utilizing the Hall-effect and disposed in a magnetic circuit including a magnetic pole unit in an opposing relationship with respect to the magnetic pole unit with a predetermined distance therebetween, a sensor frame surrounding the sensor element and having a cave defined at the opposite side of the magnetic pole unit with respect to the sensor element and at a side perpendicular to a magnetic path and a soft filler material ...

A field-effect transistor wherein a gate electrode conductive layer is connected in parallel to a plurality of conductive layers having a lower resistivity than the gate electrode conductive layer, so that the gate resistance is reduced to provide a high power output and a noise reduction.

A pressure sensor of the field-effect type includes a transistor having a gate insulation film above which a hollow chamber is provided, a gate electrode movable and deformable by pressure is formed above the gate insulation film through the hollow chamber, and an auxiliary gate electrode is provided on the boundary plane between the gate insulation film and hollow chamber, whereby the value of pressure can be detected by the drain-current variation of the transistor.

A precision Doppler effect compensator provides Doppler compensation in astic transmission by simultaneously sending a known reference signal with an information signal. The information signal and reference signal undergo identical Doppler effects. The compensator uses the Doppler shifted reference signal to sample the analog Doppler affected information signal. The analog information signals are digitally converted and stored in a first in first out shift register. The samples are read out of t...

This invention relates to the structure of a field effect transistor, which is suitable for liquid crystal display of an active matrix scheme and there is disclosed a new structure for the field effect transistor, in which at least one of the source region and the drain region is of multi-layered structure, in which high impurity concentration portions and low impurity concentration portions are alternately superposed on each other.

A MOSFET utilizes a buried channel structure comprising a buried channel between a source electrode and a drain electrode. The device also comprises a gate electrode made of material whose Fermi level is located between a conduction band and a valency band of a semiconductor. An impurity concentration in the substrate is relatively high because of buried channel structure.

A Hall effect pressure transducer incorporates a pressure-deflection diaphragm which has patterned depressions therein to enhance linearity of response; an O-ring diaphragm seal which seals the diaphragm against pressure leaks without affecting the linearity of response; a pair of magnets, preferably rectangular, oriented with their North-South axes oppositely parallel, and oriented transverse to the deflection axis of the diaphragm to provide a uniform magnetic field gradient and sensitive, acc...

A heterojunction field effect transistor according to the invention, comprises: first, second and third semiconductor layers which are sequentially stacked on each other; a first heterojunction formed between said first and second semiconductor layers; a second heterojunction formed between the second and third semiconductor layers; first and second two-dimensional electron gas layers formed in portions of the second semiconductor layer adjacent respectively to the first and second heterojunctio...