An insulated gate, field effect transistor is fabricated by covering a surface of a body of doped semiconductor material with a first layer of a dielectric material covered by a second layer of a dielectric material masking layer covered by a third layer of a highly doped semiconductor material. The third layer is defined to provide a gate electrode having exposed sides, and the sides are covered with a protective thermally grown oxide layer, the masking second layer preventing the growth of the...

A system and method of fabricating tanks comprising a plurality of carriages mounted on tracks and supporting tank sections and a chain drive mechanism for forcing the tanks into contacting relationship. Also included is a hydraulic ram for applying further contacting pressure so that intimate contact is established between adjacent sections. If the sections are supplied with the flanges, flanges are forced within the flange receiving portions of adjacent sections. The carriages contain provisio...

There is disclosed a method of manufacturing insulated-gate field effect transistor integrated circuits which includes the steps of diffusing an interconnection pattern into the surface of a semiconductor wafer prior to the formation of the insulated-gate field effect transistor devices. The insulated-gate field effect transistor devices are formed by utilizing the gate as a mask for the source and drain diffusion so that the device is self-aligned.

The disclosure herein pertains to methods for fabricating discrete semiconductor devices, particularly light-emitting diodes. The disclosure more particularly concerns a diffusion process to form controlled regions of P-type conductivity in N-type conductivity semiconductors.

Link chain is made by forming links of fiber-reinforced thermoset plastic, the fiber reinforcement of each link being wound over a mould hung in a previously fabricated link after which the polymerizable impregnating resin, e.g., polyester, is cured to form the link which has no welding seams or the like. Moulds for winding and moulding of the links may be provided with teeth, indents or the like upon which a driving device may act to rotate the mould to wind the reinforcing fiber through a pref...

A technique for the fabrication of a semiconductor device of the field-effect transistor-type involves a processing sequence wherein a self-aligning gate region comprising a noble metal-silicon-oxygen alloy serves as a mask for the source and drain diffusions and serves as gate electrode.

The method of fabricating spheroid-shaped particles of porous carbon with metal or metallic compound powder dispersed therein, which particles have controlled size, shape and porosity, by dispersing powdered metal or metallic compound material that may comprise fissionable material in precured resin particles, heating the particles in a suspended condition in a fluid medium to spherically shape and cure the particles and then pyrolyzing the cured particles to produce the spheroid-shaped porous c...

Production of a modified blazed hologram is disclosed that will exhibit a single-wavelength image when illuminated by a white, i.e., multiwavelength light source. One embodiment includes coating a sheet of ground glass on the ground side thereof with a photoresist material. This photoresist is exposed in the presence of object and reference coherent light waveforms and subsequently developed. Blazed fringes will form on the irregular surface thereof. When reilluminated with a light beam similar ...

A plated wire thin film memory assembly and fabrication method is shown and described wherein the plated wire is contained in a "tunnel structure" sandwiched between layers of a multi-layer printed circuit assembly.

A structural joint construction for connecting a first member of composite material to a second member which may be of composite material or of some other material. The construction enables tensile, compressive, torsional, and bending loads to be transmitted from the first member to the second member with a high degree of efficiency. One end of the first member is in abutting relationship with a free end of the second member such that a plurality of ends of first filament material integral with ...