This disclosure relates to the formation of stable semiconductor devices by using a noble metal-silicon-oxygen alloy as a passivation type layer on a silicon dioxide layer located on one surface of a silicon substrate or device. The noble metal-silicon-oxygen alloy is deposited onto the semiconductor substrate surface during an anodization process preferably using a hydrogen peroxide solution containing from about 30 percent to about 0.1 percent hydrogen peroxide by volume in water. The anodizat...









