A field controlled semiconductor device of SiC has a drain, a highly doped substrate layer on top of the drain and a low doped n-type drift layer on top of the substrate layer. A p-type base layer is located on the drift layer and a vertical trench extends through the base layer. In the trench an n-type channel region extends vertically along a wall of the trench and connects a source region layer to the drift layer. A gate electrode is arranged in the trench to be on the opposite side of the ch...

A field marker for attachment to a farm implement to form a groove in the ground for guiding a farmer as the implement is towed or driven across a field includes an inner wing section pivotally connected to a lateral end of the implement and an outer arm section pivotally connected to the distal end of the wing section. The wing section may be pivoted hydraulically from a working position extending outwardly from the implement to a stowage position parallel to the implement. The arm section may ...

An illumination system for bright field/dark field microscopy has a swinging deflector which is normally positioned on the optical axis when bright field microscopy is used and which is swung off the optical axis when dark field microscopy is used. When the deflector is swung off the optical axis an alternate illumination axis is utilized to provide a reduced portion of the observation axis having coaxial counterflowing light passing there along.

A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a...

The arrangement of the main windings and off-switching windings for the magnetic field of a crossed-field switching device permits a large diameter metal cathode inside of the coils.

A method of and means for generating a magnetic field in the interaction a of a cross-field device wherein the permanent magnet is positioned outside of the vacuum of the device is provided. Samarium cobalt magnet material is placed inside the cathode or sole of the device and end caps made from high-permeability material are used for pole pieces. Since the samarium cobalt is at end shield potential, no additional air gap is required.

A magnetic field effect transistor comprises a semiconductor body with a region of a specific type of conductivity, a source and a drain electrode between which is provided a channel region formed by a narrowed part of the region of the specific type of conductivity at least one barrier layer defining the channel region and controlling the channel region through the space charge region issuing from the barrier layer, and at least one additional electrode positioned laterally of the direct charge...

In a control system for a direct current series motor, the contacts of a single throw reed relay are responsive to motor current through a winding in a motor supply conductor to selectively control the application of a motor field weakening shunt resistor by a switching circuit. The charging of a timing capacitor delays action of the switching circuit to prevent motor "hunting". The opening of the reed relay contacts under low motor load conditions permits charging of the capacitor and activatin...

A field generator for generating an electrostatic field within a liquid is provided with a cylindrical body having a protective non-conducting coating covering a major portion of its length, a first boss comprising a mounting boss enclosing one end of the body in protective sealing relation therewith and a second protective boss similarly mounted in protective sealing relation at the other end of the body independently of the first boss to provide a rodless field generator construction. In one e...

In a magnetic field sensor comprising at least one magnetic-field-dependent resistor disposed in the vicinity of an outer side of a housing that is open on at least one side and further comprising a permanent magnet that is adjacent to said magnetic-field-dependent resistor, the magnetic-field-dependent resistor(s) (6), arranged on a support (4), are in a contacting relationship with the inside of a detector side wall (2) of the housing (1), and the thickness (x) of said detector side wall (2) i...