An N.sup.- semiconductor layer is epitaxially grown on an N.sup.+ semiconductor substrate serving as a drain region and overlaid with an N type epitaxial layer. Two opposite P.sup.+ gate regions are disposed in the surface portion of the N layer to define a channel region between them, and an N.sup.+ source region is located above the channel region. That portion of the N layer located between each gate region and the N.sup.- layer has a thickness not smaller than one-half of the channel width o...

A field effect transistor for operation at temperatures below 150.degree. K. is capable of operating at low voltage and current levels at high speed. The transistor is fabricated by deposition of metal source drain and gate electrodes upon a layer of semi-conductor having a concentration of free carriers less than 10.sup.16 cm.sup.-3 formed on a substrate having a resistivity greater than 10.sup.4 ohm-cm.

A tray for the field drying of fruit adapted to be rolled about the fruit during the curing thereof consisting of a flexible rectangular sheet of plastic material provided with longitudinally extending corrugations so that the sheet has greater flexibility transversely than longitudinally, the sheet having perforations in the valleys of the corrugations for drainage of rain water when the sheet is disposed flatly on the ground, tabs disposed to cover the perforations which are inverted when the ...

A sedimentation field flow fractionation channel is constructed to have an outer support ring and a continuous inner channel ring mating with the support ring to define the channel. The channel ring has a tension modulus capable of following centrifugally induced expansions of the support ring. The channel ring is weight loaded to facilitate its following support ring expansions.

A field of view test apparatus utilizes a plurality of interchangeable acic masks to vary the resolution characteristics of a projected field of view. An eye or head tracker provides line of sight direction signals to a servo which positions the mask with the optical path of the projection to correlate the area of higher resolution with the direction of the line of sight.

A junction field effect transistor has a first conductivity type substrate with high impurity concentration, a first conductivity type layer with low impurity concentration which is layered on the substrate, a first region of first conductivity type and with high impurity concentration which is formed in the surface region of the layer, and a second region of second conductivity type and with high impurity concentration which is formed in the surface region of the layer, substantially surroundin...

An animal guard for use in a field pipe has a generally circular baffle member formed of relatively thin sheet material mounted for pivotable movement in the direction of effluent flow at a perimetral point inwardly of the pipe at an axial predetermined distance from the open end of the pipe. A stop bar is secured inwardly of the pipe at a distance greater than said predetermined distance so that it is on the opposite axial side of the member. The bar extends from the inner surface of the pipe i...

Errors are corrected in a cyclic encoded data stream, consisting of sequential groups of data bits and check bits, by means of a novel digital computer. The computer employs a stored program and is organized into three distinct substructures, each having an independent internal addressable memory and all capable of synchronous concurrent operation. An arithmetic unit substructure including a data memory implements finite field arithmetic operations upon received data. The arithmetic unit include...

A multiplier for use with polynomials in an error correction system wherein the multiplier and multiplicand are first encoded from m bits to N bits, where N is greater than m, and wherein the multiplication is accomplished on a bit basis by arrays of AND gates and where the resultant product is decoded from R bits to S bits where S is less than R.

A process for growing field oxide particularly for a dynamic memory is described. The process results in thinner field oxides in the storage array (2000-3000 A) and thicker oxides for the peripheral circuits (7000-8000 A). The thinner field oxide regions have smaller bird-beaks, reducing required substrate area. The plate for the storage nodes are coupled to ground potential, thus the thinner field oxides in the storage region provide sufficient isolation.