
The capacitor of a DRAM cell is formed by depositing a layer of doped polysilicon, patterning the layer of doped polysilicon to define the extent of the capacitor's lower electrode and then depositing a first layer of hemispherical-grained silicon (HSG-Si) on the layer of doped polysilicon. Growth of the first layer of HSG-Si is interrupted and then a second layer of HSG-Si is grown. In one aspect, growth of the first layer of HSG-Si may be interrupted by either cooling the deposition substrate ...











