Integrated microsystem comprising electrical and nonelectrical, particularly optical functions in a laser system, wherein a base comprising anisotropically etchable semiconducting material on which etching structures for receiving optical and/or electro-optical and electrical/electronic and/or fluidic and/or mechanical elements or their mountings are arranged in predetermined distances and/or levels, as well as integrated switching circuits, and that at least a part of the optical, electro-optic...

A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.

An integrated circuit operative in vacuum and having all circuit elements formed in coplanar fashion on a single surface of a substrate to provide superior performance even in the presence of adverse environmental conditions. The circuit is especially adapted to microminiaturization and includes a unique electron discharge device having coplanar electrodes easily formed on a substrate surface by relatively simple film deposition techniques.

A phase shifter for microwaves is monolithically formed from a silicon panel with a grounded metallic bottom layer and a metallic top layer defining a central conductor strip longitudinally subdivided into several line segments by junctions with reactive shunts spaced a quarter wavelength apart. Each shunt path includes the series combination of a condenser and a diode both integral with the monobloc panel. Successive diodes are provided, in pairs, with common biasing leads for alternately block...

A package for a fragile integrated circuit module having radially extending leads, the package comprising a frame split into first and second frame members, the first frame member being superimposed of the second frame member. Support pads project inwardly from the corners of one of the frame members and are recessed below the upper surface of the frame for supporting the module thereon. Resilient clamps are superimposed of the pads and connected to the frame to embrace the module intermediate t...

A semiconductor integrated circuit is formed on a semiconductor substrate and includes a current mode type logic circuit and a constant current circuit to supply a constant current to the logic circuit. A reference resistor for adjusting the constant current is provided separately from the semiconductor substrate and connected to the constant current circuit. With this construction, fluctuations of the amplitude of the logic circuit output signal may be reduced.

In order to maintain the source voltage constant in an operating MOST amplifier that tends to drift in a thermally static environment a differential amplifier is connected to the source terminal of an identical auxiliary MOST amplifier operating under the same initial bias conditions as the operating MOST amplifier. A heater connected to the output of the differential amplifier alters the thermal operating point of both the MOST amplifier and the auxillary MOST amplifier until the source voltage...

An integrated flow indicator for measuring fluid quantities comprising a body having a cylindrical bore, one end of which constitutes the inlet, the other a cylinder in which a floating piston is arranged. At least one passage leads off from said bore making an acute angle with said cylinder. In the outlet of said passage a spring-loaded flap valve is disposed, and means are provided to return said piston to starting position. When fluid flows through said adaptor into said body the quantity of ...

In an integrated circuit structure including a MOSFET coupled to a lead sulfide photoconductor, a first metallization level of aluminum is used to provide source and gate contacts. A second metallization level of gold is used to make drain contact and low noise contact to the lead sulfide layer. A heavily doped diffusion layer forms a conductive path for connecting the aluminum in the first metallization level with the gold in the second metallization level while keeping the aluminum and gold ph...

Solid state low level to high level interfacing circuits for multiple discharge gas discharge devices capable of feeding through a high level periodic sustaining voltage to the discharge device with minimum degradation. The output is the algebraic sum of the periodic sustaining voltage and a level converted logic signal. NPN circuits are used to drive one set of conductors in an array and PNP circuits are used for driving transversely related conductor arrays in the gas discharge device. Dielect...