
A method is described for planarizing isolated regions (12) and active regions (22) of a semiconductor wafer (10). Semiconductor wafer (10) is provided with islands of dielectric (12) that cover portions of the semiconductor wafer (10), while leaving other portions of the semiconductor wafer (10) exposed. The dielectric islands (12) have a polysilicon layer (13) that covers the dielectric islands' (12) top surface. A blanket layer of silicon is deposited on the polysilicon layer (13) that covers...











