
The present invention is directed to new and improved apparatus for measuring overlay error between a wafer pattern and a mask pattern projected onto the wafer pattern by a lithographic exposure instrument, which includes a grating mask; a grating wafer having reflective lines alternating with non-reflective spaces patterned like the mask pattern; the lithographic instrument having projection optics mounted to project an image of the mask on the wafer, and a mechanism for moving the grating mask...











