A dielectric deposited on a substrate may be exposed to a salt solution. While exposed to the salt solution, an oxide is deposited on the dielectric.

The invention includes a method of etching silicon dioxide, comprising doping a layer of silicon dioxide to form a layer of doped silicon dioxide and etching the doped silicon dioxide layer with phosphoric acid.

An oxide cathode comprising a metal base substantially consisting of titanium and a heating element for heating said base, on which base a porous layer comprising an alkaline earth metal oxide is provided. The cathode has a comparatively low operating temperature, a short warm up time and a low power requirement.

Dielectric layers containing a chemical vapor deposited hafnium oxide and an electron beam evaporated lanthanide oxide and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO.sub.2. Forming a layer of hafnium oxide by chemical vapor deposition and forming a layer of a lanthanide oxide by electron beam evaporation, where the layer of hafnium oxide is adjacent and in contact with the layer of lan...

An oxide varistor is prepared from a basic composition formed of 70 to 14 mol% of at least one Me.sup.I O.sub.2, 29 to 85 mol% of ZnO and 1 to 20 mol% of Sb.sub.2 O.sub.3, 1 to 20% by weight of Bi.sub.2 O.sub.3, and 0.5 to 10% by weight of at least one Me.sup.II.sub.2 O.sub.3 based on said basic composition, Me.sup.I being selected from Ti, Sn and Zr, and Me.sup.II being selected from Fe, Cr, Mn and Co.

Disclosed is an oxide sensor in which a measuring electrode is arranged at a distance d to satisfy -3t.ltoreq.d.ltoreq.3t for a downstream end of an inner pumping electrode for a first chamber, i.e., the end located on a side of a second diffusion rate-determining section, provided that d represents a distance between the measuring electrode and the downstream end in a positive direction directed from the first chamber to a second chamber, and t represents a height of the first chamber. A partia...

The surface area of a zinc oxide composition is increased, and stabilized to heating, by incorporation of a tri or tetra valent metal, especially aluminium or gallium, e.g. in the form of a spinel with the zinc oxide. The composition is preferably made by coprecipitation of zinc and a compound of said metal and then calcination. The zinc oxide composition may also incorporate a Group VIII metal and be used as a catalyst for a Fischer Tropsch process.

Disclosed is an oxide sensor in which O.sub.2 contained in a measurement gas introduced into a first chamber through a first diffusion rate-determining section is removed by the aid of a pumping voltage applied between pumping electrodes, and then the measurement gas is introduced into a second chamber through a second diffusion rate-determining section to remove excessive O.sub.2 by the aid of auxiliary pumping electrodes. A detecting electrode is arranged to satisfy d.gtoreq.t provided that d ...

Process for manufacturing shaped parts out of thixotropic metal billets in horizontal pressure diecasting machines such that inclusions of oxide skin surrounding the thixotropic metal billet are avoided in the alloy structure of the shaped part. Before introducing the thixotropic metal alloy into the space inside the mould, the oxide skin surrounding the metal billet is removed completely and collected in a container such that removal of oxide-free, homogeneous thixotropic metal alloy is minimiz...

An oxide superconductor composed of Cu, O and M (M is Ba, Sr and/or Ca) and including alternately arranged at least one rock-salt structure section and at least one infinite layer structure section, wherein the rock-salt structure section consists of two atomic layers each consisting of O and M and each having an atomic ratio O/M of 1 or less, and the infinite layer structure section consists of alternately arranged, first and second atomic layers. Each of the first atomic layers consists of O a...