
A bipolar transistor includes an emitter zone having two regions of different doping levels. The more highly doped region is a surface-adjoining region located in the lower-doped region, extending only partially through the lower-doped region and laterally surrounding a central portion thereof. The transistor also includes a surface-adjoining base contact zone which surrounds the emitter zone and is laterally spaced apart from the more highly-doped region of the emitter zone. Additionally, a sur...











