This disclosure relates to an MOS random access memory array which utilizes a very small memory cell having a single MOS device and a small size, high capacitance, semiconductor capacitor device connected together to form one bit or memory cell of an MOS dynamic, random access memory array. Preferably, either the source or drain region of the MOS device is connected to the semiconductor portion of the semiconductor capacitor device which is of the electrode-insulator-semiconductor type. The semi...

A random access memory, suitable for monolithic integrated circuit fabrication, having the ability to simultaneously write therein binary data applied thereto and read therefrom binary data previously written therein. Each bit of such binary data stored by the random access memory is stored in a binary storage cell, each such cell having independent read and write addressing circuitry. Binary data is written into selected ones of a plurality of binary storage cells by establishing in such select...

A dynamic random access memory utilitizing MOSFET transistors formed on a single semi-conductor chip is described. The random access memory utilizes 1024 binary storage cells arrayed in rows and columns. Each row of cells has a read line and a write line. Each column of cells has one data line used for both read and write functions. Each cell is comprised of a write transistor and a pair of read transistors. The write transistor couples a capacitive storage node to the data line and is controlle...

A highly accurate counting technique for large numbers of randomly flowing, discrete solid particular sample materials such as capsules utilizing a feeder-sensor assembly and associated circuitry is described. The feeder-sensor assembly employs a pressure gradient along the sample passageway induced by a high-velocity air jet below the sensing element to effectuate proper spacing of the sample so that the sensing element can register individual passage of the samples. A secondary air flow which ...

In a n-channel (or p-channel) random access memory in which a plurality of memory cells are arranged in a matrix form in a p-type (or n-type) semiconductor substrate, clamping MOSFET's are connected between word lines provided for the associated rows of memory cells of the matrix and a reference potential to which gates the source electrodes of the information storing MOSFET's of the memory cells are connected. The clamping MOSFET has a lower threshold voltage than a row selecting MOSFET connect...

The specification discloses a random code generator for generating a randomized digital key stream. A plurality of shift registers are each operable to generate a randomized digital signal, the cycle period of each of the shift registers being prime to one another. Nonlinear combining circuitry receives and combines the digital signals generated by the shift registers for production of a randomized digital key stream. Mode control circuitry is responsive to the key stream for randomly varying th...

A random state generator to determine a random non-return to zero (NRZ) vage level at a particular clocked time with a noise generating diode or gas tube to provide a randomly fluctuating analogue voltage. The random voltages are amplified and applied to a transformer which acts as a gate for the random voltage. The secondary of the transformer has unidirectional conducting means connected to each of the ends and so poled that by applying a positive voltage pulse to a center tap on the secondary...

A system for generating electronic pulses separated by intervals which vary according to a predetermined probability distribution, typically exponential. The predetermined probability distribution is realized through the interaction of two other separately controlled functions. A first probability function statistically governs the selection of a first value and a second time varying function establishes the pulse time interval by relation to the selected first value.

Process for producing a completely random copolymer of a conjugated diene and a monovinyl substituted aromatic compound having the same composition as that of the starting monomeric mixture which comprises copolymerizing a conjugated diene and a monovinyl substituted aromatic compound in the presence of lithium catalyst in a polymerization medium at a temperature not higher than 150.degree. C and at which the resulting copolymer is substantially phase-separated, said temperature being dependent ...

A bed for the treatment of fluids comprising a plurality of packing units. Each packing unit has a plurality of fins disposed around an axis lying substantially in the plane of each of the fins. The fins are held in a spaced relationship to one another by at least one generally annular reinforcing member between each angularly adjacent pair of fins in a plane substantially perpendicular to the axis. The outward facing edges of the fins are serrated.