A field-effect transistor device is provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.

A semiconductor transducer comprises a semiconductor strain gauge composed of a mono-crystalline semiconducting material and a strain sensing region formed in a first main surface of the mono-crystalline semiconducting material, and a strain measuring member coupled to the semiconductor strain gauge through an alloy material. An electrical insulating layer is attached to a second main surface of the mono-crystalline semiconducting material which is coupled to the strain measuring member through ...

A method for fabricating a semiconductor device includes the formation of a monitoring element in a substrate. The monitoring element has substantially the same structure and size as a circuit element on the device which is to be monitored. Polycrystalline electrodes are contacted to the semiconductor regions of the monitoring element and extend on an insulating film covering the surface of the substrate. The electrical characteristics of the monitoring element are measured by contacting probes ...

A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.

On a semiconductor substrate (or layer) of one conductivity type, a semiconductor layer of the opposite conductivity type is formed and a source and a drain region of the same conductivity type as the semiconductor substrate are formed in the semiconductor layer. Junctions are respectively formed between the source and drain regions and the semiconductor layer at such positions where punch-through may easily occur between the source and drain regions and the semiconductor substrate when operatin...

An electronic device which includes at least one semiconductor chip with at least one circuit element thereon and connection patterns thereon being connected to the circuit element or elements. The connection patterns comprise a lower connection pattern, which is standardized and widely applicable to many kinds of circuits, and an upper connection pattern, which is positioned on the upper side of said lower connection pattern. The upper connection pattern and the lower connection pattern are con...

In a transistor structure having a pair of current electrodes and a control electrode, at least one control electrode is added to vary the negative feed-back resistance in the current path. In a typical example, both the triode-like and the pentode-like characteristics are provided by the control in the voltage applied to the additional control electrode for varying the negative feed-back resistance r.sub.s, thereby changing the product G.sub.m .multidot.r.sub.s from less than unity to greater t...

A semiconductor switch comprising a PNPN switch which has a four-layered PNPN structure with at least three PN-junctions, switching means for electrically short-circuiting a path between a P-type base and an N-type emitter of the PNPN switch when a transient voltage is applied between a P-type emitter and the N-type emitter of the PNPN switch, and drive means for driving the switching means, the drive means driving the switching means so that the path between the P-type base and the N-type emitt...

The impurity concentration distribution of the layers of a multilayer junction diode is varied such that the concentration in a first region contiguous to the junction is low, in a second region is high, in a third region is low and in a last region gradually increases in the direction away from the junction.

A method for fabricating a field-effect transistor device is provided with the device resulting having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice.