A semiconductor arrangement for switching large currents comprises a drive transistor and an output transistor connected together in the manner of a Darlington circuit and being of the same region sequence, a further three region semiconductor component of opposite sequence being connected by its central region to the base of the drive transistor, by the outer region to the base of the output transistor and by its other outer region to an electrode of the output transistor which is not connected...

A semiconductor device comprises a body of semiconductor material having a PN junction terminating at a major surface thereof. At least one field limiting ring is within the body and extends around a portion of the PN junction. Each field limiting ring is spaced apart from the surface.

KOH can be used as the electrolyte for self-limiting etching of GaAs to preferentially remove p-type material from n-type material but does not work with GaAlAs because etching is halted by the precipitation of aluminium hydroxide. An aqueous solution of triethanolamine has been found to be an alternative electrolyte which does not suffer from this problem. Preferably no external drive voltage is used but instead the current flow is promoted by the e.m.f. developed by the etching cell itself.

A semiconductor device comprises a semiconductor substrate and at least one supporting electrode soldered to one surface of the semiconductor substrate. The supporting electrode is constituted by a composite body having fibers embedded in a matrix of an electrically conductive metal. The coefficient of the thermal expansion of the fibers is substantially equal to or smaller than that of the semiconductor substrate. The fiber is arrayed in an annular, circular, spiral or the like pattern at least...

A semiconductor switch comprising: a transistor; a thyristor connected between the collector and the base of the transistor; a first control device connected to the gate of the thyristor for supplying a gate current to the thyristor and thus turning on the thyristor; and a second control device connected to the base of the transistor for supplying a base current to the transistor and thus turning off the thyristor.

A semiconductor memory has at least one V-MOS transistor which includes a trench and a storage capacitor. A semiconductor substrate is doped with concentration centers of a first conductivity type and has a buried layer which is doped with concentration centers of a second conductivity type opposite to the first conductivity type. At least two additional layers are divided by the trench and have alternately differing conductivity types, the two additional layers and the buried layer being produc...

A semiconductor layer for supporting a diode chip of a semiconductor laser is formed to be higher than a semiconductor layer containing a current-conducting region, whereby stresses acting on the diode chip by mounting the diode chip are relieved to prevent degradation of performance and reduced life of the semiconductor laser.

A semiconductor device having a planar p-n junction which in order to increase the breakdown voltage is shunted by a resistance layer of a very high resistance provided on an insulating layer. According to the invention, a resistance layer is used in the form of an elongate strip. The strip is preferably in the form of a coil, or a number of concentric contact layers present on the insulating layer are used which cross the resistance layer and assume the potential of the resistance layer at the ...

A package and mounting suitable for microwave transistors wherein lead inductances are substantially reduced and heat dissipation is improved. A semiconductor substrate having p-n junctions at one of its surfaces has its opposite surface secured to a thermally conductive electrically insulating member on a thermally conductive electrically conductive substrate which acts as the common input to the device. The member is embedded in and partially surrounded by the electrically conductive substrate...

A first protecting insulated gate field effect (IGFE) transistor has a drain and a source connected respectively to a gate and a source of an IGFE transistor to be protected against overvoltages with the gate connected to an input through a resistor. A second protecting IGFE transistor higher in threshold voltage than the first protecting transistor has a source connected to the gate of the first protecting transistor and through another resistor to the source of the same transistor with its gat...