The formation of a contact individually on at least one selected region of a semiconductor body, such as is required in the manufacture of a read-only memory store, comprises providing on each selected region a layer of contact material on a layer of insulating material, and applying a potential between the contact material and the selected region to cause the contact material to penetrate through the layer of insulating material.

A beam lead contact arrangement for a Gunn diode, having a lightly doped active layer on a heavily doped substrate. One contact connects to the top surface of the active layer, while the other contact is connected to the heavily doped substrate through a hole in the active layer. The second contact also makes contact to the active layer, but current flow is vertical through the layer due to spreading resistance.

A semiconductor assembly comprises a semiconductor component, a body operatively connected to the semiconductor component, a force generating means operatively connected to the body and effective to force the body and the semiconductor into engagement, and means operatively connected to the force generating means and effective to vary its position. The change in position of the end sections is controlled by bolts which pass through the end sections and the body and are operatively connected to t...

A semiconductor arrangement comprises a field effect transistor tetrode and a field effect transistor triode in a single semiconductor body, one electrode of the triode entering between the source and the drain electrodes of the tetrode to form one of the two control electrodes thereof.

A semiconductor target comprises a semiconductor substrate and a diode array patterned on the substrate. Diodes are isolated from each other by an insulating film. A p-n junction plane of the diodes is designed to lie over the boundary plane of the substrate and the insulating film.

A semiconductor arrangement comprises two feed lines leading into a housing, a semiconductor diode connecting to one feed line and resistance means connected to the other feed line, the diode and the resistance means being also connected together in series.

The materials or dimensions of a gate insulating film or a gate electrode of an insulated gate field effect type semiconductor device are made different, so as to provide a gate of two or more gate parts having different structures. It is thus possible to adjust the threshold voltage to a desired value, to render the operation highly speedy, and so forth, and excellent semiconductor devices having hitherto been unattainable can be obtained.

A semiconductor device comprises a four terminal semiconductor component (such as a power transistor) mounted on a metallic base plate through an intermediate insulating plate, four metallic regions on the intermediate plate, two metallic regions being provided at the margin of the intermediate plate, opposite each other and between which a third metallic region extends to a position adjacent a fourth metallic region, means for connecting the electrodes of the semiconductor component with the me...

A semiconductor arrangement including a continuous band of planar conduct material forming a geometric structure with periodically repeating zones. The structure has conductor portions connected together by a longitudinal edge strip serving as a transporting strip, at least one contact bar extending alongside the transporting strip and connected to the transporting strip by a plurality of ones of the conductor portions, and planar contact portions which are also connected to the transporting str...

A semiconductor assembly for use with a high frequency semiconductor device is presented which uses at least one stand-off having a conductive surface which overhangs the semiconductor device and which has pressure-absorbing contacts mounted thereon thereby protecting the semiconductor from direct pressure while providing for electrical contact to the semiconductor and allowing for very short leads from the stand-off to the semiconductor device.