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Results for semiconductor and  
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A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e.,.about.1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a me...
A semiconductor device in which a top-contact semiconductor body is thermo-electrostatically face down bonded to a vitreous support carrying patterned metallization forming leads registered with the top contacts, and a protective insulative coating is provided over at least portions of the leads to preclude shortcircuiting to exposed portions of the semiconductor body.
A semiconductor device comprising a semiconductor body portion having a shallow surface layer which is higher doped than the bulk of the semiconductor body portion, and a metal electrode on this layer and forming a Schottky barrier with the body portion. The layer serves to control the effective height of the barrier. The depth of the layer is such that the layer is substantially depleted of charge carriers in the zero bias condition whereby the slope of the reverse current-voltage characteristi...
A semiconductor crystal having a target area and an oxide insulation layer on the same planar surface and a barrier of X-ray absorbent material in a direct line between the target and the interface between the semiconductor material and the oxide insulation layer to protect the interface against X-rays.
In a semiconductor device, the surface of a semiconductor element is covered with a silicone varnish in which the side chain radical ratio between methyl radicals and phenyl radicals is 20:1 or greater, whereby the element is effectively shielded from the external moisture.
A semiconductor device, particularly an integrated semiconductor circuit, in which in a region (island) of a given conductivity type a group of semiconductor circuit elements is provided having a common zone. According to the invention, the region comprises a highly doped zone of the same conductivity type, which within the semiconductor body substantially entirely surrounds the group of circuit elements and is not contacted or is contacted only locally. Due to the presence of said highly doped ...
A semiconductor device including a body of semiconductor material having a iven energy gap and lattice constant and a plurality of zones which, in a given direction, constitute a succession of alternatingly n-conductive and p-conductive zones having a given excess of donors and acceptors respectively, and each having a thickness in the given direction which is less than 10.sup.3 times the lattice constant. The actual thicknesses and doping concentrations of the p-conductive and n-conductive zone...
A semiconductor switch comprising a transistor connected to a main circuit having a DC current and a load; pulsing means which is connected in series in an electric path connecting the collector and the emitter of the transistor; and a thyristor having main current electrodes connected in parallel to the series combination of the transistor and the pulsing means.
A semiconductor device having an ohmic contact including a metal layer of molybdenum or tungsten on a first polycrystalline silicon layer, is provided with a second polycrystalline silicon layer on the metal layer, to prevent the subsequent oxidation of the metal layer.
An improved semiconductor device with a high blocking capability of the t having a semiconductor wafer with at least two layer type zones of alternatingly opposite conductivity type and different doping concentrations which form a pn junction therebetween which intersects the edge surface of the semiconductor wafer, the higher doped of the at least two zones forming the pn junction being an outer zone of said semiconductor wafer and extending along one of the major surfaces thereof, the edge sur...
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