A stable semiconductor switch comprising a PNPN switch, a transistor, a driving device, and diodes. The PNPN switch is composed of four-layered PNPN structure and has three PN-junctions, an anode, an anode gate, a cathode gate, and a cathode. The collector and the emitter of the transistor are connected to the cathode gate and the cathode of the PNPN switch, respectively. The driving device has its one end connected to the anode gate of the PNPN switch and its other end connected to the base of ...

A semiconductor laser has a semiconductor base having (100) orientation. A semiconductor mesa of a III-V material is grown on the base by liquid phase epitaxy. The semiconductor mesa has crystallographic facets perpendicular to the base and parallel to one another. The crystallographic facets from the reflecting mirrors of a lasing cavity.

An insulated gate FET comprises a semiconductor substrate, source and drain regions formed in the surface of the semiconductor substrate in a manner spaced at a prescribed interval from each other, and a gate electrode provided on a surface portion of the substrate between the source and drain regions through an insulation layer. Depletion layers formed by the action of a buit-in-field are spread, respectively, into said semiconductor substrate from the source and drain regions, and these two de...

A semiconductor photodetector comprising a first semiconductor layer having N-type conductivity; a second semiconductor layer having N-type conductivity, disposed in the vicinity of the first semiconductor layer and having a resistivity higher than that of the first semiconductor layer; a third region having P-type conductivity, disposed in the vicinity of the second semiconductor layer and having a thickness smaller than that of the second semiconductor layer; a first main electrode kept in ohm...

A process for improving the continuity of overlayers above an aluminum metallization stripe on a semiconductor device which includes the step of forming a conversion coating on the surface of the aluminium metallization. The conversion coating has a higher etch rate than the aluminum per se, and hence after selective masking, a tapered or sloped edge is produced on the aluminum stripe which is more easily continuously overlayed by the further necessary layers.

The invention relates to the fabrication of IMPATT diodes. The invention discloses a specific sequence of steps and enables diodes to be mass produced without technological variations.

A semiconductor switch of a PNPN structure comprises a PNPN switch of an equivalently four-layered structure including a P-type anode, N-type cathode, N-type gate and P-type gate, a first NPN transistor, a second PNP transistor, a level shifting circuit, and an impedance element, wherein the impedance element is connected between the collector and emitter of the first transistor, the first transistor has its collector and emitter connected to the P-type gate and N-type cathode respectively, and ...

A semiconductor device, which provides efficient heat dissipation, includes a semiconductor support member formed of an insulating, thermally conductive material having a projecting portion on the top surface and a first conducting layer extending along the surfaces of the support members from the bottom to the projecting portion. An insulating wall member for installing terminals is disposed on the top surface of the semiconductor support member in areas around the projecting portion. A second ...

An apparatus for testing the operating state of single and multiple semiconductor junctions, either in or out of circuit. The tester includes a testing circuit which in turn includes a transformer having a secondary with plurality of voltage tap leads, which are selectively connectable by a switching device to a resistance and voltage divider array, which includes means adapted to receive the junction to be tested. The output of the testing circuit is applied to a display circuit which includes ...

A semiconductor diode has a blocking electrode for minority carriers constructed in such a manner that the space charge region extends right up to the blocking electrode in the operation state.