Semiconductor structure having a plurality of isolated islands in which semiconductor devices are formed and which are interconnected to form an integrated circuit. The islands are isolated from each other by a combination of dielectric isolation in the form of moats and regions of higher conductivity extending downwardly into the semiconductor body from the moats. The semiconductor body from which the semiconductor structure is formed has a surface with a <100> orientation. An etch resist...

Semiconductor material consists of polyvinyldimethylsiloxane rubber, filler material conducting electricity, and a curing agent. Said curing agent is dialkylaminomethyltrialkoxysilane. The components of the proposed material are taken in the following proportion, in part by weight: Polyvinyldimethylsiloxane rubber: 100 Filler conducting electricity: 20-100 Dialkylaminomethyl trialkoxysilane: 0.5-4.

A semiconductor device having two transistors which have a common collector. The device is characterized in that the distance between the two base zones is such that during operation of the device the depletion zones of the base-collector junctions merge into each other. Application to the manufacture of photo-Darlington devices.

A semiconductor device comprises a D.C. voltage supply region comprising a semiconductor substrate of one conductivity type having a first layer of high impurity concentration at least at its surface, and a second layer of low impurity concentration and of the same conductivity type as that of the D.C. voltage supply region, provided thereon and formed interiorly with a thin buried layer of the opposite conductivity type to that of the second layer at the vicinity of the D.C. voltage supply regi...

A semiconductor store is disclosed comprising a semiconductor substrate of a highly doped semiconductor material of one conductivity type, an epitaxial layer on one surface of said substrate of the same conductivity type and of low doping, a buried layer lying partly in said substrate and partly in said epitaxial layer, said buried layer being of the opposite conductivity type and of high doping, a highly doped second layer of the same conductivity type as said buried layer in the outer surface ...

Various devices are described herein utilizing anisotropic etching and dielectric isolations as means for limiting areas of either conductivity type semiconductor material. Surface junctions normally found in the diffused semiconductor devices of the prior art are also eliminated by the use of overlap diffusion techniques. Anisotropic etching is employed in certain of the devices for attaining buried PN junctions.

A random access type semiconductor memory comprises a pair of data line halves arranged in parallel, a plurality of word lines orthogonal to the data line halves, a multiplicity of memory cells, each of which is arranged at either one of the cross points between the data line halves and each of the word lines, a differential amplifier to which signals on the data line halves are differentially applied, and a main amplifier to which output signals on the data line halves are differentially applie...

A semiconductor switch comprising a PNPN switch having an equivalently four-layer structure of p, n, p and n regions and three PN junctions; a transistor; two impedance elements and a capacitive element, wherein the transistor and one of the impedance elements is connected in parallel to each other, the parallel circuit thus formed being connected between the p base and the cathode of the PNPN switch, the capacitive element is connected between the base of the transistor and the anode of the PNP...

A semiconductor memory comprises means for forcing the potential on one data line to which no writing means is connected to be set to a certain level after data have been read from a memory cell, and means for setting the level of the one data line cooperating with another data line supplied with a voltage corresponding to data to be written and a sense amplifier in order to restore the one data line set to the certain level to the voltage corresponding to the data to be written. This allows the...

A solid state electrical component is packaged within a housing and after connection to a terminal board is potted by an encapsulating medium. The solid state electrical component includes a chip area and a plurality of terminals connected to the chip. These terminals are connected to a terminal board which provides support for additional terminal members which extend from the housing and adapted for connection in an electrical circuit. The housing and device are supported by a frame serving as ...