A semiconductor device comprises a substrate made of an alloy having the formula Cd.sub.x Hg.sub.1-x Te where x is a non-zero number less than 1. The substrate has P type conductivity and a doping agent such as mercury is diffused into the substrate to form a region of N type conductivity therein. Before diffusion of the mercury into the substrate, a protective layer of cadmium telluride CdTe is applied to the surface of the substrate and the doping agent is diffused into the substrate through t...

A semiconductor switch has a pair of PNPN switches connected in an inverse-parallel mode and each includes a switching circuit for protection against the rate effect. Each switch has its gate terminal multi-connected through a capacitive element to provide a terminal, which is connected to the output terminal of a control circuit for generating a voltage pulse in a repetitive manner to bear the difference of potential between the PNPN switches and a capacitive element by means of the capacitive ...

A semiconductor structure may be fabricated that confines current flow to two dimensions by constructing as a structure a body of alternate regions of different semiconductor materials with current flow parallel to the intersections of the regions. The structure, in device form, exhibits the properties of selectable energy gap, higher carrier mobility and increased electronic density of states. Such devices are usable for their bulk properties, their junction electro-optical properties and their...

A semiconductor memory has storage cells composed of MOS selector transistors operated by a drive line and storage capacitors connected to selector transistors. The selector transistors are constructed in accordance with the V-MOS technique. A semiconductor substrate is highly doped with atoms of one conductivity type and carries a buried layer highly doped with atoms of the opposite conductivity type. An epitaxial layer, weakly doped with atoms of the one conductivity type is carried over the b...

A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from...

The invention disclosed relates to a bulk semiconductor device having a semiconductor element exhibiting a negative conductivity under a high electric field and being capable of generating a high electric field domain therein. The semiconductor device includes two ohmic electrodes disposed at opposite ends to apply a bias voltage, at least one means for generating a high electric field domain in the semiconductor device by means applying an input signal to the generating means, at least one mean...

A method of making a number of semiconductor diodes on a single wafer without breakage during handling and processing, comprising the steps of forming a plurality of mesas on one surface of an intrinsic substrate, diffusing a selected first conductivity-type region into each mesa, coating the front surface of the substrate and mesas wiyth oxide, chemically milling recesses into the opposite side of the substrate in alignment with the mesas to a predetermined depth where the mesas are each suppor...

The invention relates to a photo-sensitive solid-state electronic device whose anode-cathode current is modified by photon induced changes in the electrical condition of a dielectric layer on the semiconductor body. The invention is primarily concerned with the nature of the photosensitive material used for the device which is chosen to cause charge injection into the dielectric layer. The semiconductor body may define a FET, an MIS or a CCD device and the photosensitive material is conveniently...

A semiconductor switch assuring the easy formation of a semiconductor integrated circuit and having high control sensitivity while maintaining high dv/dt - immunity, which comprises a PNPN switch of an equivalently four-layered structure including at least three PN-junctions, an anode and a cathode, switching means including a control terminal and connected with the PNPN switch to shunt one of the three PN-junctions at either one end of the PNPN switch, amplifying means, and a capacitive element...

A semiconductor device having a bipolar transistor of the lateral type, preferably a pnp-transistor which is provided in a homogeneously doped semiconductor layer and which may be provided both in an n-type and in a p-type semiconductor layer and of which the base comprises a highly doped contact region and an associated substantially non-depleted active base region, while the emitter zone is situated substantially entirely within the active base region. Herewith, high frequency complementary tr...