A strain sensor adapted for adhesive attachment to a device element such as a valve stem includes a sensor circuit coupon, a support for the coupon, and a clamp carried by the support for clamping the support around the device element.

A high-performance strain gauge has a high gauge factor and a decreased temperature coefficient of resistance (TCR). The strain gauge has a laminated structure that includes a first layer formed of a positive TCR material and a second layer formed of a negative TCR material.

The invention relates to an improved strain relief adapted for mounting within a connector housing so as to protect a terminated cable assembled thereto from damage as a result of flexure of the cable relative to the housing. The strain relief including a sleeve having a proximal portion, a distal portion, and a central lumen disposed therebetween. The sleeve being adapted to slidingly receive the cable within the central lumen. The distal portion of the strain relief includes a substantially ri...

A strain sensor includes a sensor body extending substantially in a plane. The sensor body is substantially symmetric in the plane about a first axis and a second axis that is perpendicular to the first axis. The sensor body includes a plurality of sensor body portions symmetrically spaced apart about the first axis and the second axis with the plurality of sensor body portions interconnected by respective beams. The strain sensor further includes at least one strain sensing element mounted on o...

A strain sensor including a ceramic substrate deformable in response to a stress exerted thereon, and an electrically resistive layer formed on the ceramic substrate, so that a strain of the ceramic substrate caused by the stress is detected as a change in a resistance value of the electrically resistive layer. The electrically resistive layer has a composition which includes a dielectric material selected from the group consisting of glasses and ceramics, and at least one principal electrically...

The present invention relates to a strain sensor, particularly a strain sensor which detects a mechanical strain using the electric resistance change of a non-single crystalline semiconductor which is proportional to mechanical strain. The strain sensor in the present invention consists of a non-single crystalline semiconductor containing Si wherein the activation energy determined from the temperature dependency of the dark conductivity is under 15 meV. The strain sensor particularly suits an a...

A strain gage includes a pair of coils printed on one face of a substrate and an amorphous magnetic metallic plate arranged on the other face of said substrate and having magnetostrictive effect. Magnetic flux generated by one of the paired coils passes through the amorphous magnetic metallic plate and links with the other of the coils. When load is added to an object and strain of the object is caused by the load added, therefore, the magnetic permeability of the amorphous magnetic metallic pla...

A Strain Follower comprises cantilevered beams mounted by gripping means on opposite sides of an object to be loaded, which beams are deflected in relationship to the deformation of the object by axial forces, and strain gages mounted on the beams and electrically within a wheatstone bridge circuit for providing an output representative of the axial deformation of the loaded object, while minimizing the impact, on the output by bending and torsional forces acting on the object.

A strain gauge comprised of a premagnetized ferromagnetic film wherein any change in length of the film can be measured by employing the properties of magnetostriction and magnetoresistance. The strain gauge is deposited on a substrate by thin-film techniques and has a very high sensitivity. Preferably, two electrically insulated strips parallel strips of amorphous metal film have (in the absence of strain) respective directions of magnetization aligned antiparallel to one another and are connec...

For the metal substrate of a strain sensor, a Mo-containing two-phase stainless steel SUS329 is used. When an insulating layer, electrodes and a resistor are formed on the metal substrate by baking their materials, the alpha phase in the stainless steel of the metal substrate changes to a sigma phase through the baking heat, and, as a result, the range of strain applicable to the sensor within the elastic region of the substrate is broadened and the residual strain of the substrate is reduced. T...