A transistor inverter in which a power source is supplied to an output transformer through first and second transistors; the first and second transistors are alternately driven conductive by driving signals of opposite polarities derived from a driving signal generator; and the driving signal generator is driven to be controlled by a driving control signal from a driving control signal generator to provide the above driving signals and controlled by a control signal based on one portion of the o...

A transistor amplifier includes at least one field effect transistor with triode characteristics employed for amplifying purposes, particularly in an output stage, with the drain and source electrodes of each such transistor being connected, through a load, between terminals of an operating voltage source which is subject to fluctuations, and with an input signal being applied to the gate electrode of the field effect transistor having triode characteristics. In order to ensure that fluctuations...

A lateral region detects the saturation condition and provides overflow negative feedback or a trigger preparation voltage.

A transistor amplifier comprising a first transistor having its base connected to the input terminal of the amplifier and having one of its further electrodes connected through a coupling capacitor to the output terminal of the amplifier. The transistor has the other one of its further electrodes connected to the base of a subsequent transistor having the corresponding electrode of its further electrodes connected through a second coupling capacitor to a second output terminal of the amplifier. ...

A differential amplifier stage, suitable for use as the first stage in an operational amplifier with a single power supply, has the capability of its input terminals being operated over a range including one of the supply potentials. The differential amplifier stage includes a pair of emitter-coupled transistors of a first conductivity type having their base electrodes connected to input signal terminals. These transistors are each provided with an active collector load by grounded-emitter trans...

First and second transistors have their emitter electrodes connected to receive operating current from the same supply. A current amplifier has its input circuit connected to sense the base current of the second transistor and its output circuit connected to supply base current to the first transistor responsive to the sensed current. This current amplifier connection stabilizes the quiescent collector currents of the first and second transistors to predictable values. Balanced output currents r...

A device which uses a light signal to control the amplification of light is disclosed. Optically active ions in a laser material are pumped to an intermediate energy state by light of a first frequency, and thereafter pumped from the intermediate energy state to an upper energy state by light of a second frequency. Lasing occurs when the optically active ions fall back to the intermediate energy state. When the intensity of the light of the first frequency is below the threshold pumping level, n...

A process for fabricating a high speed bipolar transistor is described wherein the collector, base and emitter layers are first grown using molecular beam epitaxy (MBE). A mesa etch is performed to isolate a base-emitter region, and a contact layer is grown using MBE over this isolated region to make contact with the thin base layer. The contact layer is selectively etched to expose the emitter layer, and metal is deposited to fabricate emitter, base and collector contacts.

A heterojunction transistor device having emitter and collector regions of a first conductivity type separated by an ultra-thin base region of a second conductivity type. Abrupt heterojunctions are formed which are then heat treated to allow the formation of graded heterojunctions exhibiting rectifying characteristics. Typically, the emitter and collector regions are comprised of GaSb while said base region is comprised of InAs. The band gap of the emitter region is selectively chosen to be rela...

Disclosed is a self-aligned process for providing an improved bipolar transistor structure. The process includes the chemically etching of an intermediate insulating layer to undercut another top layer of a different insulating material in a self-aligned emitter process wherein the spacing of the emitter contact to the polysilicon base contact is reduced to a magnitude of approximately 0.2 to 0.3 micrometers. In addition, in the process an emitter plug is formed to block the emitter region from ...