An n channel MOSFET transistor which includes doping of previously formed source and drain elements with a heavy diffusion of phosphorous or arsenic creating n++ regions in the source and drain. The extra diffusion step is preferably accomplished just prior to contact metalization.

In a device of Darlington connection of transistors formed on one monolithic substrate, wherein the substrate has a collector region of a first conductivity and a base region of a second conductivity, the collector region and the base region forming a P-N junction inbetween, the base region has at least two emitter regions which are simultaneously formed therein with a specified space inbetween and have the conductivity type same with each other and opposite to that of said base region, the impr...

The collector currents of first and second junction transistors which have base electrodes biased at the same quiescent potential and have emitter electrodes connected via respective emitter degeneration resistances to a common point, are adjusted relative to each other. This is done by applying linearly temperature-dependent voltages in adjustable ratio with each other to the emitter degeneration resistances. This makes it so that the adjustment of the relative values of the collector currents ...

An MOS mesa transistor is comprised of a silicon island on an insulating substrate. The silicon island consists entirely of a source region, a drain region, and an I-shaped channel region which separates the source and drain regions. The island has a coating of an oxide of silicon thereon. A rectangular conductive gate is adjacent to the coating and above the channel region and the transverse extremities of the I-shaped channel region extend bilaterally and transversely from underneath the gate ...

An improved high power vertical MOS transistor is disclosed. The channel region of the transistor is electrically connected to the source terminal. The active region of the transistor comprises a plurality of finger-like mesas extending at approximately right angles from a second palm-like mesa. The finger-like mesas form the active regions of the transistor with the palm-like mesa serving as a support for the source bonding pad. Thin metallic stripes extend along the edges of the finger-like me...

The collector of an NPN transistor is connected to the inverting terminal of an operational amplifier to cause a collector current of the NPN transistor to be inverted by the operational amplifier. The combination circuit of the NPN transistor and operational amplifier equivalently works as a PNP transistor.

The base-emitter junction of a bipolar transistor is first forward biased to place the transistor in a state of conduction and the forward bias is then removed. A discharge path is provided for the base-emitter capacitance of the transistor, this path including a source of reverse bias voltage for the base-emitter junction. A sensing circuit indicates when the base-emitter capacitance has discharged through the path sufficiently to permit the base-emitter junction to become reverse biased, which...

In a non-gold-doped TTL device to be energized by a potential supply of at least 4.5 volts; the charge carrier concentration within a NPN multi-emitter input transistor is reduced by connecting together the base and the collector; undesirable emitter-to-emitter transistor action is prevented, by reducing the inverse current gain factor of the input transistor, and preventing this transistor from saturating, by providing a diode within the phase splitter stage, to ensure that the input threshold ...

The collector currents of first and second junction transistors which have base electrodes biased at the same quiescent potential and have emitter electrodes connected via respective emitter degeneration resistances to a common point, are adjusted relative to each other. This is done by applying temperature-independent currents in adjustable ratio with each other to the emitter degeneration resistances. The resistances have temperature coefficients of 1/T.sub.O to make the adjustment of the coll...

A single-ended, transistorized push/pull circuit amplifies the output of a generator mechanically interlocked to the transistorized motor rotor and is connected across the drive winding of the motor for driving the same.