An MOS mesa transistor wherein the sidewalls of the mesa are electrically isolated from a device formed on the principal surface of the mesa, is provided. The mesa is comprised of a source and a drain which do not extend to a sidewall of the mesa. The source and the drain are surrounded by a band of semiconductor material which is a portion of the mesa and which electrically isolates the source and the drain from the sidewalls of the mesa.

A transistor inverter includes a pair of switching transistors each having base, emitter and collector electrodes, each of the collector and emitter circuits of which is connected between a DC voltage source through a primary winding of an output transformer, respectively, the secondary winding of which is connected to a rectifying circuit so as to produce a DC output voltage at its output. The transistor inverter also includes an input transformer with a saturable core and voltage feedback and ...

This invention relates to a bidirectional transistor, and particularly to a transistor having two low impurity concentration regions on either side of a base region which act as the emitter or collector regions with a minority carrier diffusion length L substantially greater than the width of such emitter and collector regions when operating in either direction. High impurity concentration regions interface with the low impurity concentration regions to provide a built-in-field which is larger t...

A transistor amplifier comprised of a class-A amplifier connected in cascade with a push-pull amplifier. The class-A amplifier includes first and second field effect transistors having triode-type dynamic characteristics with their respective gate electrodes connected to receive an input signal and their source and drain electrodes connected in series across opposite power supply terminals. The push-pull amplifier includes third and fourth field effect transistors having triode-type dynamic char...

A transistor with interdigitated emitter and base fingers, in which the emitter has a web portion for feeding current to the fingers, and metal layers on both the web and the fingers. The emitter finger metal layers are spaced from the web portion metal layers to introduce a ballasting resistance, with that portion of each finger metal layer proximate to the web portion being substantially wider than the remainder of the finger layer, and interspersed between the corresponding base finger and th...

A BICMOS semiconductor device (20) and method for its fabrication is disclosed. Bipolar, PMOS, and NMOS transistors (22, 26, and 28) are isolated from one another by a P type channel stop (54) implantation step prior to formation of a field oxide (56). An N type channel stop (64) implantation step occurs after the field oxide (56) formation. In addition, the N type channel stop (64) implantation step utilizes the same mask as is used to implant N dopant which forms a deep collector region (62) f...

A transistor inserter mechanism for inserting transistors with leads which has lead-straightening blades, guide arms to align the leads with predrilled holes in a circuit board and an ejector plunger. A slide block and spindle are mounted in a retainer for joint and relative movement during which the straightening blades first engage and disengage the leads and the guides are employed. The guides are disengaged after the leads enter the holes but prior to the operation of the ejector plunger.

A bipolar transistor including an emitter region of a first conductivity type, having a predetermined width, an inner base region of a second conductivity type, formed below the emitter region and contacting the emitter region, thus forming a PN junction, an outer base region of the second conductivity type, having a high impurity concentration, set in ohmic contact with the edge of the inner base region and surrounding the inner base region, an inner collector region of the first conductivity t...

In a matrix of transistors, base and emitter elements are interconnected in first and second groups wherein each transistor is identified by a unique combination of input connections with respect to the first and second groups. Transistors, the combined input values of which add to the same sum, have common collector output means for providing an adding function. In an integrated circuit construction, the common collector output means comprise adjoining isolation regions, wherein several transis...

A transistor assembly for high-frequency operation includes a housing of an electrically insulating and thermally conductive material having a passage therethrough from one end to the other end. A transistor element having collector, emitter and base electrodes is mounted in the passage adjacent one end of the housing, and is thermally connected to the housing. A separate contact terminal having a head on one end is secured to each end of the housing with the terminals being in the same plane an...