A method for fabricating a DRAM cell having enhanced-capacitance attributable to the use of a porous structured polycrystalline silicon layer storage node capacitor plate. The present invention is particularly applicable to DRAM cells which employ a stacked capacitor design. Such designs generally employ a conductively-doped polycrystalline silicon layer as the storage node, or lower, capacitor plate. A microstructure is formed by anodizing the storage node plate layer in a solution of hydrofluo…

High quality silicon thin films are formed on a substrate in a conventional chemical vapor deposition reactor using silicon hydride source gas, and allowing adsorption of the deposition at low temperature before decomposition at a higher temperature. The silicon source gas comprises a mixture of silane and polysilanes exhibiting different coefficients of adsorption in order to achieve a uniform growth of successive thin films.

An inductively coupled plasma chamber having a capacitor electrode during cleaning of the plasma chamber.

An inductively coupled plasma chamber having a capacitor electrode during cleaning of the plasma chamber.

An integral process is provided for depositing onto, and etching a layer of copper from, a multi-layer structure. The subject process, which is conducted within a vacuum chamber, comprises providing a multi-layer having at least one major surface in which contact/vias are located. Next, a copper precursor is deposited onto at least one major surface of the multi-layer structure and into the contact/vias. The substrate temperature of the multi-layer structure in the vacuum chamber is maintained a…

A low-pressure chemical vapor deposition process is disclosed for creating high-density, highly-conformal titanium nitride films which have very low bulk resistivity, and which provide excellent step coverage. The process utilizes a metal-organic compound, tetrakis-dialkylamido-titanium Ti(NR.sub.2).sub.4, as the primary precursor, in combination with a halogen gas selected from the group consisting of fluorine, chlorine and bromine. The wafer is heated to a temperature within a range of 200.deg…

A method for chemical vapor deposition onto high aspect ratio features. Process gases including a reactant species are supplied to the surface and sufficient primary energy is supplied to the surface so as to cause the reactant species to deposit on the surface. Additional energy is supplied, preferably in the form of optical energy, that is tuned to be captured by the patterned features so as to slow the deposition rate preferentially on the patterned features.

A chemical vapor deposition method of providing a conformal layer of a titanium carbonitride atop a semiconductor wafer comprises: a) positioning a wafer within a chemical vapor deposition reactor; b) providing a source of an activated halogen species within the chemical vapor deposition reactor; c) injecting selected quantities of a gaseous titanium organometallic precursor and a carrier gas to within the reactor having the wafer positioned therein; and d) maintaining the reactor at a pressure …

A method for chemical vapor deposition onto high aspect ratio features. Process gases including a reactant species are supplied to the surface and sufficient primary energy is supplied to the surface so as to cause the reactant species to deposit on the surface. Additional energy is supplied, preferably in the form of optical energy, that is tuned to be captured by the patterned features so as to slow the deposition rate preferentially on the patterned features.

An apparatus and method for stopping mechanical and chemical-mechanical polishing of a substrate at a desired endpoint. In one embodiment, a polishing machine has a platen, a polishing pad positioned on the platen, and a polishing medium located at a planarizing surface of the polishing pad. The polishing machine also has a substrate carrier that may be positioned over the planarizing surface of the polishing pad, and at least one heat sensor is coupled to the polishing machine to detect heat at…