Dielectric material compositions comprising HfO.sub.2 and a second compound are disclosed. The compositions are characterized by at least a part of the compositions being in a cubic crystallographic phase. Further, semiconductor based devices comprising such dielectric material compound and method for forming such compounds are disclosed.

A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is…

In a semiconductor memory including a dynamic random access memory, a memory cell of the dynamic random access memory includes: a semiconductor pillar (a silicon pillar); a capacitor in which one side of the silicon pillar is used as a charge accumulation electrode; and a longitudinal insulated gate static induction transistor in which the other side of the silicon pillar is used as an active region (a source region, a channel formation region and a drain region), and a bit line is connected to …

A liquid crystal display device includes a liquid crystal cell, first and second polarizers disposed outside the liquid crystal cell, first and second retardation plates arranged between the first and second polarizers, and the liquid crystal cell, and optical layers arranged between the first and second retardation plates and the liquid crystal cell. The first and second retardation plates have lagging axes perpendicular with each other. The first polarizer has an absorption axis inclining by a…

A method for fabricating a liquid crystal display device, which includes a liquid crystal layer, a pair of electrodes for use to apply a voltage to the liquid crystal layer, and at least one inorganic alignment film. The inorganic alignment film makes direct contact with the liquid crystal layer and is made of a crystalline conductive film where crystal grains are oriented in a predetermined direction preferentially.

Seeds are implanted in a regular pattern upon an undersubstrate. An Al.sub.xIn.sub.yGa.sub.1-x-yN (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0<x+y.ltoreq.1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest d…

Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.

The invention provides an electro-optical device that can include, in a peripheral region of the image display region on the element substrate, a plurality of external circuit connection terminals, a plurality of main wiring lines each having one end connected to each of the plurality of external circuit connection terminals, and peripheral driving circuits connected to the other ends of the main wiring lines, the peripheral driving circuits for driving the pixel portions based on electric signa…

A transreflection-type liquid crystal display (LCD) device includes a plurality of gate and data lines on a substrate crossing each other defining a plurality of pixel regions, a plurality of storage lines parallel to the gate lines, each storage line positioned between the gate lines, a plurality of thin film transistors disposed at the crossings of the gate and data lines, each thin film transistor having source and drain electrodes and a U-shaped channel region, a negative-type organic insula…

An array substrate device includes a gate line formed on a substrate extending along a first direction having a gate electrode, a data line formed on the substrate extending along a second direction having a data pad disposed apart from a first end of the data line, the data and gate lines defining a pixel region, a gate pad formed on the substrate disposed apart from a first end of the gate line, a thin film transistor formed at a crossing region of the gate and data lines and including the gat…